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[PS-04-06]Influence of Dummy Gate Layout on Turn-On EMI Noise in Trench IGBTs

Wei Wei1,2, 〇Xiaoli Tian1, Ruixue Mai1,2, Yun Bai1, Yidan Tang1, Jilong Hao1, Xuan Li1, Hong Chen3, Xinhua Wang1, Xinyu Liu1 (1. Inst.of Microelectronics of Chinese Academy of Sciences (China), 2. Univ. of Chinese Academy of Sciences (China), 3. JIEJIE Microelectronics Co. Ltd (China))