Presentation Information
[PS-04-16]Realization of N-polar GaN/AlGaN Heterostructures on Silicon Using an AlSiN Polarity Inversion Layer by MOCVD
〇Yin-Nan Wang1, Chia-Yu Hsieh1, Hsin-Ning Li1, Hung-Yang Lin1, Jen-Inn Chyi1, Yue-ming Hsin1 (1. National Central Univ. (Taiwan))