[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-17] Bias and Temperature Dependence of Threshold Voltage Instability Induced by Low Drain Bias in E-mode AlGaN/GaN HEMTs

〇Myeongsu Chae¹, Hyungtak Kim¹ (1. Hongik Univ. (Korea))

DOI:

https://doi.org/10.7567/SSDM.2025.PS-04-17

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