Presentation Information
[PS-04-18]Grating-Gate THz Plasmonic Detector Based on an InGaAs-channel HEMT with an InP Barrier Layer
〇Masaki Nagatsu1, Kenichi Narita1, Yuma Takida2, Hiroaki Minamide2, Tsung tse Lin1, Akira Satou1 (1. Tohoku Univercity (Japan), 2. RIKEN Center for Advanced Photonics (Japan))