Presentation Information

[PS-04-22]Isolation Characteristics of GaN Mesas on Diamond Substrates Fabricated Using the Surface-Activated Bonding

〇Yosei Sunamoto1, Hazuki Tomiyama1, Tetsuya Suemitsu2, Naoteru Shigekawa1, Jianbo Liang1 (1. Osaka Metropolitan University (Japan), 2. Tohoku University (Japan))