Presentation Information
[PS-10-20]Oxygen vacancy mobility and charge de-trapping in 6 nm HZO-based ferroelectric capacitors as a function of annealing temperature
〇Lucía Pérez Ramírez1, Gunjan Yadav1, Nicholas Barrett1, Jean Coignus2, Nicolas Vaxelaire2, Laurent Grenouillet2, Andrea Locatelli3, Tevfik Onur Mentes3 (1. SPEC, CEA, CNRS, Université Paris-Saclay (France), 2. CEA-Leti, Université Grenoble-Alpes (France), 3. Elettra–Sincrotrone Trieste SCpA, Basovizza (Italy))