2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation09: Novel Functional / Quantum / Spintronic Devices and Materials

[D-1]Spintronics/Quantum Materials/Reservoir Computing

Tue. Sep 16, 2025 1:30 PM - 3:15 PM JST
Tue. Sep 16, 2025 4:30 AM - 6:15 AM UTC
Room D (304, 3rd Floor)
Session Chair: Shinobu Ohya (The Univ. of Tokyo), Kenichi Aoshima (NHK STRL)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[D-1-01 (Invited)]Towards Van der Waals Semiconductor Heterojunction Spintronic Devices

〇Kaiyou Wang1,2 (1. Inst. of Semiconductors, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[D-1-02]Spontaneous spin-splitting observed in (In,Fe)Sb via resonant tunneling spectroscopy in double-barrier heterostructures

〇Akhil Sanjaya Kumar Pillai1, Le Duc Anh1,2, Masaaki Tanaka1,2,3 (1. Dept. EEIS, The Univ. of Tokyo (Japan), 2. CSRN, The Univ. of Tokyo (Japan), 3. Inst. for NanoQuine, The Univ. of Tokyo (Japan))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[D-1-03]Self-Generated Spin Wave in Biquadratic Coupled Spin Torque Oscillators

〇Tsz Chung Cheng1, Chuhan Liu1, Yuichiro Kurokawa1, Hiromi Yuasa1 (1. Kyushu University (Japan))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[D-1-04 (Late News)]Fabrication and Evaluation of Topological Semimetal YPtBi/Ta/CoFeB Junctions with High Spin Hall Angle for SOT-MRAM

〇Sho Kagami1, Reo Yamamoto1, Zhang Ruixian1, Ken Ishida1, Quang Le2, Brian York2, Cherngye Hwang2, Xiaoyong Liu2, Son Le2, Maki Maeda3, Tuo Fan3, Yu Tao3, Hisashi Takano3, Pham Nam Hai1 (1. Sci. Tokyo (Japan), 2. WD. Inc. GO (United States of America), 3. WD. Inc. FJ (Japan))
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[D-1-05]Chiral plasmonic metasurfaces facilitate the manipulation of valley degrees of freedom in two-dimensional materials

〇Yang Xu1, Yunfei Xie1, Yuxin Ye1, Jianhua Huang2, Zhi-Xiang Zhang1, Zongwen Li1, Qianqian Zhang1, Ming Huang2, Xuan Ye1, Yuan Ma1, Xiaochen Wang1, Bin Yu1, Ziwei Li2 (1. Zhejiang Univ. (China), 2. Hunan Univ. (China))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[D-1-06]Enhanced Information Processing Capacity of Redox-Type Ion-Gating Reservoirs via Physical Masking with Periodic Drain Voltage Streams

〇Daiki Nishioka1, Kaoru Shibata2, Wataru Namiki2, Kazuya Terabe2, Takashi Tsuchiya2 (1. International Center for Young Scientists, NIMS (Japan), 2. Research Center for Materials Nanoarchitectonics, NIMS (Japan))
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