[G-2] Light Sources | 2025 International Conference on Solid State Devices and Materials

Advanced Search

Session Details

Oral Presentation05: Photonics: Devices / Integration / Related Technology

[G-2]Light Sources

Tue. Sep 16, 2025 3:30 PM - 5:00 PM JST
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC

Room G (313, 3rd Floor)

Session Chair: Xuejun Xu (Nippon Telegraph and Telephone Corporation), Mizuki Shirao (Mitsubishi Electric)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[G-2-01]Telecom Nanobeam Lasers Monolithically Integrated on SOI

〇Zhenhua Wu¹, Cong Zeng¹, Zili Lei¹, Zhaojie Ren¹, Ying Yu¹, Siyuan Yu¹, Yu Han¹ (1. Sun Yat-sen University (China))

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[G-2-02]High-rate and high-brightness photon-pair generation from silicon microring resonator

〇Shoichiro Yasui^1,2, Tomohiro Inaba¹, Hidetaka Nishi^3,4, Reina Kaji², Satoru Adachi², Xuejun Xu¹, Haruki Sanada¹ (1. NTT Basic Res. Labs. (Japan), 2. Graduate School of Eng., Hokkaido Univ. (Japan), 3. NTT Device Tech. Labs. (Japan), 4. NTT Nanophotonics Center (Japan))

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[G-2-03]Numerical Simulation of Output Characteristics of Narrow-LinewidthTunable External Cavity Laser using Thin-Film Lithium Niobate Platform

〇KELIN CHEN^1,2, Atsushi Matsumoto², Kouichi Akahane², Naokatsu Yamamoto², Tomohiro Maeda^1,2, Hideyuki Sotobayashi¹ (1. The Univ. of Aoyama Gakuin (Japan), 2. Inst. of Information and Communications Technology (Japan))

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[G-2-04]Electroluminescence of 1.27μm Near-Infrared Quantum Cascade Lasers using Si/CaF₂ Heterostructures on SOI Substrate

〇Zhiyuan Fan¹, Hyuma Suzuki¹, Haibo Wang¹, Masahiro Watanabe¹ (1. Inst. of Science Tokyo (Japan))

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[G-2-05]Effect of Stacking Number of InGaAs Quantum Dot Active Layers on Circularly Polarized Electroluminescence Properties of Spin-Polarized Light-Emitting Diodes

〇Itsu Tanaka¹, Daiki Mineyama¹, Ayano Morita¹, Hiroto Kise¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido Univ. (Japan))

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[G-2-06]Significant Emission Enhancement of InGaN/GaN MQW Nanostripes

〇Seiichi Kataoka^1,2, Akihiko Kikuchi^1,2 (1. Sophia univ. (Japan), 2. Sophia Semiconductor Research Inst. (Japan))

Back to Category List