Session Details

[N-3]Oxide Semiconductor Devices 3

Wed. Sep 17, 2025 9:00 AM - 10:30 AM JST
Wed. Sep 17, 2025 12:00 AM - 1:30 AM UTC
Room N (416+417, 4th Floor)
Session Chair: Keisuke Ide (Science Tokyo), Yusaku Magari (Kochi Univ. of Tech.)

[N-3-01 (Invited)]Developing high-performance p-type oxide TFTs and circuits

〇Ao Liu1, Mingyang Wang, Zhikai Le, Huihui Zhu (1. Univ. of Electronic Sci. and Tech. of China (China))

[N-3-02]High-Performance Nanoscale Self-Aligned Top-Gate Indium Oxide Thin-Film Transistors with Ti/Au Source/Drain Electrodes

〇Zhihao Lv1, Shengjie Yang1, Mengran Liu1, Zhendong Jiang1, Yuhan Zhang1, Xinwei Wang1, Shengdong Zhang1, Lei Lu1 (1. Peking Univ. (China))

[N-3-03]High-Performance InGaO TFTs by Optimizing Contact Resistance via an In2O3 Interlayer

〇Chenchen Ye1, Peiyan Hong1, Jiakang Li1, Xuefei Li1 (1. Huazhong University of Science and Technology (China))

[N-3-04]Achieving high-mobility and stable InGaO thin-film transistors by stacking InGaO films

Ruixin Chen1, Chuan Liu1, Li Zhang1, 〇Mengye Wang1 (1. Sun Yat-sen Univ. (China))

[N-3-05]High-Performance Thin-Film Transistors Based on IGO Homojunctions with Electrically Tunable Threshold Voltage

〇Shuheng Fu1, Xiao Li1, Zhendong Jiang1, Mengran Liu1, Shengjie Yang1, Lei Lu1 (1. Peking Univ. (China))