[K-6] Characterization III | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[K-6]Characterization III

Thu. Sep 18, 2025 10:45 AM - 11:45 AM JST
Thu. Sep 18, 2025 1:45 AM - 2:45 AM UTC

Room K (413, 4th Floor)

Session Chair: Shinjiro Hara (NIMS), Takeshi Yanagida (The Univ. of Tokyo)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[K-6-01]Interlayer Stacking Order Enhanced Photoresponse in Multilayer Graphene Silicon Schottky Diodes

〇Yang Xu¹, Muhammad Abid Anwar¹, Srikrishna Chanakya Bodepudi¹, Wenzhang Fang¹, Muhammad Malik¹, Yance Chen¹, Qianqian Zhang¹, Zongwen Li¹, Zhi-Xiang Zhang¹, Jian Chai¹, Xie Yunfei¹, Hu Huan^1,2, Bin Yu¹ (1. College of Integrated Circuits, ZJU-HIC, Zhejiang University, Hangzhou, China (China), 2. ZJU-UIUC, Zhejiang University, Haining, China (China))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[K-6-02]Tunable Contact Interfaces in MoS₂ Memristors for Synaptic Emulation in Neuromorphic Systems

〇Durgadevi Elamaran¹, Masahiro Sakai¹, Daisuke Kiriya¹ (1. The Univ. of Tokyo (Japan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[K-6-03]DFT and Experimental Insights into Strain-Controlled Enhancement of Sensing Performance in Graphene Gas Sensors

〇Meng Yin¹, Xiangyu Qiao¹, Yunsong Tang¹, Ying Chen¹, Hideo Miura², Ken Suzuki³ (1. Graduate School of Enginnering, Tohoku Univ. (Japan), 2. Co-Creation Inst. for Advanced Materials, Shimane Univ. (Japan), 3. Green X-tech Center, Green Goals Initiative, Tohoku Univ. (Japan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[K-6-04]Controlling Dopant Ionization Energy in Substitutionally Doped TMDC Monolayers: A Universal Semi-Empirical Model and Experimental Verification

〇Kaito Kanahashi¹, Mian Wei¹, Ryo Kawaguchi¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan))