[K-7] Device III | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[K-7]Device III

Thu. Sep 18, 2025 1:30 PM - 2:30 PM JST
Thu. Sep 18, 2025 4:30 AM - 5:30 AM UTC

Room K (413, 4th Floor)

Session Chair: Takamasa Kawanago (AIST), Yusuke Hoshi (Tokyo City Univ.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[K-7-01]Characteristics of p-Type WSe₂ FETs with Ru S/D Contacts

〇Kuan-Lin Lee¹, Szu-Huan Hsu¹, Yueh-Ju Chan¹, Yiming Li¹ (1. Nat'l Yang Ming Chiao Tung Univ. (Taiwan))

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[K-7-02]A metal-semiconductor field effect transistor based on a graphene/thin Si Schottky junction for ultraviolet light detection

〇Yang Xu¹, Qianqian Zhang¹, Zongwen Li¹, Yunfei Xie¹, Zhi-Xiang Zhang¹, Chuan Qin¹, Muhammad Malik¹, Jian Chai¹, Muhammad Abid Anwar¹, Bin Yu¹ (1. Zhejiang Univ. (China))

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[K-7-03]Reconfigurable Logic Obfuscation Enabled by 2D Ferroelectric Transistor for Secure Circuits

〇Xinwei Zhang¹, Xi Wang¹, Guanyu Liu¹, Bin Yu¹ (1. Zhejiang University (China))

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[K-7-04]Engineering of P Type Layer for High Performance Vertical WSe2 p-i-n Photovoltaic Detector

〇Maoxin Tian¹, Tianjiao Zhang¹, Cheng Zhang¹, Jialei Miao¹, Bin Yu¹, Yang Xu¹, Yuda Zhao¹ (1. THe Univ. of Zhejiang (China))