[A-2] Gate stack engineering 1

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[A-2-01] Effect of Annealing Temperature on Ultra-thin EOT of HfZrON Gate Dielectrics with Nitrogen Plasma Treatment

〇Zhaohao Zhang^1,2, Kun Zhong^1,2, Junfeng Li^1,2, Huaxiang Yin^1,2 (1. Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China))