[A-2] Gate stack engineering 1

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[A-2-02] Decoupling of Time to Breakdown and Charge to Breakdown via Area Scaling in HfO₂ Gate Stacks with TiAlC and Bottom TiN Insertion

〇Hiroyuki Ota¹, Yukinori Morita¹, Kenzo Manabe¹, Misako Morota¹, Naoya Okada¹, Kazuya Uejima¹, Shinji Migita¹, Yoshihiro Hayashi¹ (1. AIST (Japan))