[A-2] Gate stack engineering 1

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[A-2-04] Leakage current and EOT reduction of HfSiOx Gate Dielectric via Controlled Nitridation Using Millisecond Flash Lamp Annealing

〇Yuito Maki¹, Hayato Watanabe¹, Hideaki Tanimura¹, Katsuhiro Mitsuda¹, Shinichi Kato¹, Takumi Mikawa¹, Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 2. Tokyo City University (Japan))