[A-2] Gate stack engineering 1

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[A-2-06] Mitigating BTI Degradation in HKMG Transistors via Oxygen Reservoir Layer Engineering

〇Kyungwook Park^1,2, Changhwan Choi¹, Sangkuk Han¹, Wonjae Choi¹, Haesoo Jang¹, Jaewon Chung¹, Sangmyun Lim¹, Sangwoo Jung¹, Soyoung Park¹ (1. Hanyang Univ. (Korea), 2. Samsung Electronics Corp., Ltd. (Korea))