[A-3] Gate stack engineering 2

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[A-3-05] Flat-Band Voltage Control and Variability Using an Ultra-Thin Al₂O₃ Dipole Layer: Analysis of Dipole and Fixed Charges

〇Takefumi Kamioka^1,6, Toshihide Nabatame^2,6, Hiroki Matsukawa^3,6, Takamasa Kawanago^1,6, Yukinori Morita^1,6, Kasidit Toprasertpong^3,6, Yuichiro Mitani^4,6, Takashi Onaya^2,6, Naoki Fukata^2,6, Wipakorn Jevasuwan^2,6, Kazuhito Tsukagoshi^2,6, Takuya Hoshii^5,6, Atsushi Tamura^3,6, Koji Kita^3,6, Naoya Okada^1,6, Kenzou Manabe^1,6, Wataru Mizubayashi^1,6, Hiroyuki Ota^1,6, Takashi Matsukawa^1,6, Shinji Migita^1,6 (1. AIST (Japan), 2. NIMS (Japan), 3. The Univ. of Tokyo (Japan), 4. Tokyo City Univ. (Japan), 5. Science Tokyo (Japan), 6. LSTC (Japan))