[A-5] GAA FET

8:30 AM - 8:45 AM JST(11:30 PM - 11:45 PM UTC)

[A-5-01] Standard Cell Performance Improvement with Ultra Low Temperature (<350°C) SiGe:B GAA Si Nanosheet P-FET

〇Arka Dutta¹, Ritam Sarkar¹, Pierre Eyben¹, Daniel Casey², Hiroaki Arimura¹, Thomas Chiarella¹, Anabela Veloso¹, Andrea Pondini^1,3, Alexander Makarov¹, Lynn Verschueren¹, Hans Mertens¹, Clement Porret¹, Thomas Dursap¹, Jishnu Ganguly¹, Conor Cullen², Rami Khazaka², Min Soo Kim¹, Lucas Petersen Barbosa Lima¹, Jerome Mitard¹, Serge Biesemans¹, Naoto Horiguchi¹ (1. imec (Belgium), 2. ASM (Belgium), 3. KU Leuven (Belgium))