[A-5] GAA FET

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[A-5-05] Sub-Nanometer Tomographic Imaging of Resistance, Carrier Distribution and Effective Gate Length in 45 nm Gate Pitch Nanosheet-FETs

〇Andrea Pondini^1,2, Pierre Eyben², Lennaert Wouters², Hiroaki Arimura², Thomas Chiarella², Hans Mertens², Arka Dutta², Albert Minj², Clement Porret², Erik Rosseel², Philippe Matagne², Thomas Hantschel², Naoto Horiguchi², Jérôme Mitard², Anne Verhulst^1,2 (1. KU Leuven (Belgium), 2. imec (Belgium))