[A-6] Advanced CMOS process

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[A-6-04] Ultra-Doped In-Situ Si:P Raised S/D for performance improvement in view of 10 nm FD-SOI nMOSFETs

〇Krunoslav Romanjek¹, Blend Mohamad¹, Joël Kanyandekwe¹, Zdenek Chalupa¹, Micaël Charbonneau¹, Valérie Lapras¹, Théo Cabaret¹, Tadeu Mota-Frutuoso¹, Wissem Baik¹, Fabien Bringuier¹, Laurent Brévard¹, Alexandre Magalhaes-Lucas¹, Marie-Claire Cyrille¹, Claire Fenouillet-Beranger¹ (1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France (France))