2026 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-6]Advanced CMOS process

Thu. Sep 17, 2026 10:15 AM - 12:00 PM JST
Thu. Sep 17, 2026 1:15 AM - 3:00 AM UTC
Room A(Convention Hall 1, 2rd Floor)
Session Chair:Takashi Matsukawa(AIST), Keisuke Yamamoto(Kumamoto Univ.)
10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[A-6-01 (Invited)]Material-Driven Device-Level Thermal Management Strategies

〇Chang-Seok Lee1, Taehoon Kim1, Jaewon Kim Kim1, Jae Hong Lee1, Yoonhoo Ha1, Woochang Lee1 (1. Samsung Advanced Institute of Tech. (Korea))
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[A-6-02]Overlay and Grid Distortion Control in the Fabrication of Bonded CFET devices

〇Rajendra Kumar Saroj1, Andrea Mingardi1, Teresa Rodrigues1, Koen D'have1, Sandip Halder1, Hans Mertens1, Camila Cavalcante1, Hung-Chieh Tsai1, Serena Iacovo1, Steven Brems1, Min-Soo Kim1, Steven Demuynck1, Lucas Petersen Barbosa Lima1, Naoto Horiguchi1, Serge Biesemans1 (1. IMEC (Belgium))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[A-6-03]Optimization of vertically stacked n-NSFET combining experimental access re-sistance extraction and TCAD analysis.

〇Pierre Eyben EYBEN1, An De Keersgieter1, Maryam Hosseini1, Andrea Pondini1,2, Arka Dutta1, Hiroaki Arimura1, Thomas Chiarella1, Elena Capogreco1, Philippe Matagne1, Jérôme Mitard1, Naoto Horiguchi1 (1. IMEC (Belgium), 2. KU Leuven (Belgium))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[A-6-04]Ultra-Doped In-Situ Si:P Raised S/D for performance improvement in view of 10 nm FD-SOI nMOSFETs

〇Krunoslav Romanjek1, Blend Mohamad1, Joël Kanyandekwe1, Zdenek Chalupa1, Micaël Charbonneau1, Valérie Lapras1, Théo Cabaret1, Tadeu Mota-Frutuoso1, Wissem Baik1, Fabien Bringuier1, Laurent Brévard1, Alexandre Magalhaes-Lucas1, Marie-Claire Cyrille1, Claire Fenouillet-Beranger1 (1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France (France))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[A-6-05]Innovative Contact Etch Stop Layer Allowing Performance and Robustness Improvement for Advanced FD-SOI Devices

〇Emmanuel PETITPREZ1, Pierre BRIANCEAU1, Blend MOHAMAD1, Zdenek CHALUPA1, Alexis KRAKOVINSKY1, Krunoslav ROMANJEK1, Jorge-Pablo NACENTA MENDIVIL1 (1. Univ. Grenoble Alpes, CEA-Leti (France))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[A-6-06]High Performance GeOI (111) nMOSFETs with Ge-Bi-Te S/D Contact using High-temperature Sputtering Deposition

〇Wen Hsin Chang1, Shogo Hatayama1, Fang-Jui Chu2, Naoya Okada1, Toshifumi Irisawa1, Yao-Jen Lee3, Yeong-Her Wang2, Tatsuro Maeda1, Yuta Saito4 (1. Natl. Inst. Adv. Indus. Sci. Tech. (Japan), 2. Natl. Cheng Kung Univ. (Taiwan), 3. Natl. Yang Ming Chiao Tung Univ. (Taiwan), 4. Tohoku Univ. (Japan))
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