[A-6] Advanced CMOS process

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[A-6-06] High Performance GeOI (111) nMOSFETs with Ge-Bi-Te S/D Contact using High-temperature Sputtering Deposition

〇Wen Hsin Chang¹, Shogo Hatayama¹, Fang-Jui Chu², Naoya Okada¹, Toshifumi Irisawa¹, Yao-Jen Lee³, Yeong-Her Wang², Tatsuro Maeda¹, Yuta Saito⁴ (1. Natl. Inst. Adv. Indus. Sci. Tech. (Japan), 2. Natl. Cheng Kung Univ. (Taiwan), 3. Natl. Yang Ming Chiao Tung Univ. (Taiwan), 4. Tohoku Univ. (Japan))