[A-8] CryoFET and mobility

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[A-8-03] Quantitative Representation of High-N_s Mobility in (100) Si n-MOSFETs at 4 K: Combined Effects of Multi-Subband Occupation, Surface Roughness, and Coulomb Scattering

〇Shinichi Takagi¹, Kei Sumita², Zhao Jin², Yutong Chen², Hiroshi Oka³, Takahiro Mori³, Mitsuru Takenaka², Kasidit Toprasertpong² (1. Teikyo Univ. (Japan), 2. The Univ. of Tokyo (Japan), 3. Nat. Inst. Adv. Indus. Sci. and Tech. (AIST) (Japan))