2026 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-8]CryoFET and mobility

Thu. Sep 17, 2026 2:30 PM - 4:15 PM JST
Thu. Sep 17, 2026 5:30 AM - 7:15 AM UTC
Room A(Convention Hall 1, 2rd Floor)
Session Chair:Satofumi Souma(Kobe Univ.), Anabela Veloso(imec)
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[A-8-01 (Invited)]TBD

〇Ken Uchida1 (1. The Univ. of Tokyo (Japan))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[A-8-02]Temperature Detection utilizing Superconducting Transition Temperature for Characterizing the Self-heating of Cryo-CMOS

〇Takumi Inaba1, Hidehiro Asai1, Tomoki Kashiwagi1,2, Takumi Katorhi1,3, Hiroshi Oka1, Kimihiko Kato1, Shota Iizuka1, Takashi Nakayama1, Satoshi Moriyama3, Takahiro Mori1 (1. National Institute of Advanced Industrial Science and Technology (Japan), 2. Chuo University (Japan), 3. Tokyo Denki University (Japan))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[A-8-03]Quantitative Representation of High-Ns Mobility in (100) Si n-MOSFETs at 4 K: Combined Effects of Multi-Subband Occupation, Surface Roughness, and Coulomb Scattering

〇Shinichi Takagi1, Kei Sumita2, Zhao Jin2, Yutong Chen2, Hiroshi Oka3, Takahiro Mori3, Mitsuru Takenaka2, Kasidit Toprasertpong2 (1. Teikyo Univ. (Japan), 2. The Univ. of Tokyo (Japan), 3. Nat. Inst. Adv. Indus. Sci. and Tech. (AIST) (Japan))
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[A-8-04]Cryogenic Characteristics of Si PMOS Gate-All-Around Transistors with La Dipole Engineering from 300 K to 15 K

〇Jiahe Xu1, Fei Zhao1, Ran Cheng2, Yongliang Li1 (1. Inst. of Microelectronics of the Chinese Academy of Sciences (China), 2. Zhejiang Univ. (China))
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[A-8-05]Impact of substrate off-angles on electrical characteristics of vicinal Si(110) n-MOSFETs

〇Ryotaro Shimura1, Yutong Chen1, Koji Matsumoto2, Akihiro Suzuki2, Hiroaki Yamamoto2, Kazuhito Matsukawa2, Mitsuru Takenaka1, Shinichi Takagi1,3, Kasidit Toprasertpong1 (1. The Univ. of Tokyo (Japan), 2. SUMCO Corp. (Japan), 3. Teikyo Univ. (Japan))
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[A-8-06]Monte Carlo Simulation of Electron Transport in MOSFETs Incorporating Impurity-Induced Random Potentials at Cryogenic Temperatures

〇Kaoru Kato1, Hajime Tanaka1,2, Nobuya Mori1 (1. The Univ. of Osaka (Japan), 2. Kwansei Gakuin Univ. (Japan))
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