[A-8] CryoFET and mobility

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[A-8-04] Cryogenic Characteristics of Si PMOS Gate-All-Around Transistors with La Dipole Engineering from 300 K to 15 K

〇Jiahe Xu¹, Fei Zhao¹, Ran Cheng², Yongliang Li¹ (1. Inst. of Microelectronics of the Chinese Academy of Sciences (China), 2. Zhejiang Univ. (China))