[A-8] CryoFET and mobility

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[A-8-06] Monte Carlo Simulation of Electron Transport in MOSFETs Incorporating Impurity-Induced Random Potentials at Cryogenic Temperatures

〇Kaoru Kato¹, Hajime Tanaka^1,2, Nobuya Mori¹ (1. The Univ. of Osaka (Japan), 2. Kwansei Gakuin Univ. (Japan))