[B-1] Ferroelectric Devices

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[B-1-03] Oxygen Vacancy Dynamics Governing Wake-Up and Fatigue
in Ferroelectric HfO₂ Capacitors Revealed by Depth-Resolved HAXPES

〇Hideaki Tanimura^1,2, Tomoya Mifune¹, Yuma Ueno², Yusuke Tani², Hironori Fujisawa¹, Seiji Nakashima¹, Ai Isohashi Osaka¹, Yasumasa Takagi³, Akira Yasui³, Jiayi Tang³, Shinichi Kato², Takumi Mikawa² (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan), 3. JASRI (Japan))