2026 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-1]Ferroelectric Devices

Tue. Sep 15, 2026 1:15 PM - 2:45 PM JST
Tue. Sep 15, 2026 4:15 AM - 5:45 AM UTC
Room B(Convention Hall 2, 2rd Floor)
Session Chair:Halid Mulaosmanovic(GlobalFoundries), Toshinori Numata(Toyota Technological Institute)
1:15 PM - 1:45 PM JST(4:15 AM - 4:45 AM UTC)

[B-1-01 (Invited)]Polarization Switching Dynamics of Integrated Ferroelectric DRAM Capacitors

〇Michael Hoffmann1, Johannes Ocker1, Nima Akbari Moghaddam1, Thorsten Kammler1 (1. Ferroelectric Memory GmbH (FMC) (Germany))
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[B-1-02]Suppressing Oxygen-Vacancy-Mediated Reliability Degradation and Variability in HZO FeFETs with Lanthanum Oxygen Diffusion Barrier

〇jihoon CHOI1, Kyung Soo Park1, Yoonseok Lee1, Jin Yeong Lee1, Yeon Woo Choi1, Gyu Min Hwang1, Sang Myun Lim1, Do Hyun Lee1, Tae Suk Kim1, Ye Jun Park1, Changhwan Choi1 (1. Hanyang university (Korea))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[B-1-03]Oxygen Vacancy Dynamics Governing Wake-Up and Fatigue
in Ferroelectric HfO2 Capacitors Revealed by Depth-Resolved HAXPES

〇Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai Isohashi Osaka1, Yasumasa Takagi3, Akira Yasui3, Jiayi Tang3, Shinichi Kato2, Takumi Mikawa2 (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan), 3. JASRI (Japan))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[B-1-04]Memory Window Evolution in Hafnia-based Ferro-Ionic-Trapping Transistors

〇Youngchan Cho1, Changhyeon Han2, Daewoong Kwon2, Wonjun Shin1 (1. Sungkyunkwan Univ. (Korea), 2. Hanyang Univ. (Korea))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[B-1-05]Enhanced Radiation Tolerance in HZO FeCAPs Using ZrN Interfacial Engineering and Microwave Annealing

〇Jung Ting Chang1 (1. National Tsing Hua Univ. (Taiwan))
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