Presentation Information
[B-2-01 (Invited)]Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash Memory
〇Dae Hyun Kang1, Jaejoong Jeong1, Youngkeun Park1, Yungjun Kim1, Dong Hun Sin2, Soo Kyeom Yong2, Bio Kim2, Han Mei Choi2, Byung Jin Cho1 (1. KAIST (Korea), 2. Samsung Electronics (Korea))
