[B-2] 3D NAND Flash Memory

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[B-2-03] Defect Spectroscopy Revealing Interfacial-Trap-Dominance in HfO₂-based Charge-Trap Layers for Advanced NAND Flash Application

〇Woojae Jang^1,2,3, Yusuke Higashi¹, Laurent Breuil¹, Haengha Seo¹, João Bastos¹, Geert Van den bosch¹, Maarten Rosmeulen^1,2 (1. imec (Belgium), 2. KU Leuven (Belgium), 3. Samsung Electronics (Korea))