[B-2] 3D NAND Flash Memory

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[B-2-05] A Novel Architecture with a Dual-Channel to Improve Cell Current in 3D NAND Flash

Daewoong Kang¹, 〇Hojun Lee Lee^1,2, Siwon Park^1,3, Hoyeon Ko^1,2, Jeongnam Youn¹, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))