[B-2] 3D NAND Flash Memory

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[B-2-06] Novel Antiferroelectric Si-Doped HfO₂ Blocking Layer for Low-Voltage (<= 15 V) Charge-Trapping Flash with a 6.90 V Memory Window

〇Kaiyi Li^1,2,3, Yuanyuan Zhao^1,3, Mingkai Bai^1,3, Xinpei Jia^1,3, Tao Hu^1,3, Yajing Ding^1,3, Ruoyao Ji^1,3, Haofeng Wang^1,3, Mengjie Zhao^1,3, Xiaoqing Sun^1,3, Junshuai Chai^1,3, Hao Xu^1,3, Xiaolei Wang^1,3 (1. State Key Lab. of Fabrication Tech. for Integrated Circuits, Inst. of Microelectronics of the Chinese Academy of Sci. (IMECAS) (China), 2. School of Advanced Interdisciplinary Sci., Uni. of Chinese Academy of Sci. (China), 3. The School of Integrated Circuits, Univ. of Chinese Academy of Sci. (China))