[B-3] DRAM 1

8:30 AM - 8:45 AM JST(11:30 PM - 11:45 PM UTC)

[B-3-01] N-Rich Interface-Control Nitride Metal Interlayer for Improved HZO MPB Dielectrics and Reliability in DRAM Capacitors

〇Jaewon Chung¹, Sangkuk Han¹, Wonjae Choi¹, Haesoo Jang¹, Sangmyun Lim¹, Kyungwook Park¹, Sangwoo Jeong¹, Soyoung Park¹, Kanghyeok Lee¹, Changhwan Choi¹ (1. Hanyang Univ. (Korea))