[B-3] DRAM 1

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[B-3-03] Low Damaged Bit-line Contact for Excellent Epitaxial Regrowth for Silicon Junction in D1b-nm DRAM

〇Dongkyu Jang¹, Taewook Kim¹, Seungchul Yang¹, Minjoo Oh¹, Changmin Kim¹, Goeun Heo¹, Taehoon Park¹ (1. Samsung Electronics (Korea))