2026 International Conference on Solid State Devices and Materials
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Tue. Sep 15, 2026
Wed. Sep 16, 2026
Thu. Sep 17, 2026
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11:00 AM - 11:15 AM JST
(2:00 AM - 2:15 AM UTC)
[B-4-02]
Dynamics of trapped electron migration in HfO
2
/SiO
x
gate dielectrics clarified through displacement current measurement
〇Yuki Komatsubara
1
, Reika Ichihara
1
(1. Kioxia Corp. (Japan))
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