[B-4] Ferroelectric FET 1 | 2026 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-4]Ferroelectric FET 1

Wed. Sep 16, 2026 10:30 AM - 12:00 PM JST
Wed. Sep 16, 2026 1:30 AM - 3:00 AM UTC

Room B(Convention Hall 2, 2rd Floor)

Session Chair:Laurent Grenouillet(CEA-Leti), Yumeng Zheng(Tokyo Univ. of Science)

10:30 AM - 11:00 AM JST(1:30 AM - 2:00 AM UTC)

[B-4-01 (Invited)]Design Strategies for Radiation-Hard FeFET Memories through Interface, Channel, and HfZrO_x Composition Engineering

〇Yung-Hsien Wu¹, Hao-Kai Peng¹, Sheng-Yen Zheng¹, Wei-Ning Kao¹, Jung-Ting Chang¹ (1. Department of Engineering and System Science, National Tsing Hua Univ., Hsinchu, Taiwan (Taiwan))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[B-4-02]Dynamics of trapped electron migration in HfO₂/SiO_x gate dielectrics clarified through displacement current measurement

〇Yuki Komatsubara¹, Reika Ichihara¹ (1. Kioxia Corp. (Japan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-4-03]FeMFET Endurance and Retention Reliability Overview for Low-Voltage Operation Prospects

〇Louise Dumas¹, Joel Minguet Lopez¹, Jean Coignus¹, Simon Martin¹, Fabien Grimaud¹, Laurent Grenouillet¹ (1. CEA-Leti (France))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-04]Observation of polarization switching-induced carrier mobility degradation in MOSFETs utilizing ferroelectric and antiferroelectric-like Hf_1-xZr_xO₂/Si gate stacks

〇Hiroyuki Matsukawa¹, Mitsuru Takenaka¹, Shinichi Takagi^1,2, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan), 2. Teikyo Univ. (Japan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-4-05]BEOL-Compatible AlScN/IGZO FeFET with Robust Non-Volatile Behaviors and Multi-Level Cell Capability

〇Ziqing Wang¹, Xi Zhou¹, Hongwei Hao², Shulin Zhu¹, Dongdong Li², Weipeng Xuan³, Liang Zhao¹ (1. Zhejiang Univ. (China), 2. Zhangjiang Lab. (China), 3. Hangzhou Dianzi Univ. (China))

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