[B-4] Ferroelectric FET 1

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-04] Observation of polarization switching-induced carrier mobility degradation in MOSFETs utilizing ferroelectric and antiferroelectric-like Hf_1-xZr_xO₂/Si gate stacks

〇Hiroyuki Matsukawa¹, Mitsuru Takenaka¹, Shinichi Takagi^1,2, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan), 2. Teikyo Univ. (Japan))