[B-6] DRAM 2

10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[B-6-01 (Invited)] High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel Transistor DRAM (OCTRAM)

〇Fumiya Kimura¹, Takamitsu Ochi¹, Tsuyoshi Sugisaki¹, Takanori Akita¹, Isamu Ujiie¹, Sota Mochizuki¹, Masayoshi Iwayama¹, Atsuko Sakata¹, Shinji Miyano¹, Takafumi Masuda¹, Kazuki Eshiro¹, Tomomasa Ueda¹, Nobuyoshi Saito¹, Keiji Ikeda¹, Mutsumi Okajima¹ (1. KIOXIA Corp. (Japan))