2026 International Conference on Solid State Devices and Materials
Advanced Search

Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-6]DRAM 2

Thu. Sep 17, 2026 10:15 AM - 11:45 AM JST
Thu. Sep 17, 2026 1:15 AM - 2:45 AM UTC
Room B(Convention Hall 2, 2rd Floor)
Session Chair:Hyung-Suk Jung(Samsung Electronics), Takayuki Iwaki(Micron Memory Japan, K.K.)
10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[B-6-01 (Invited)]High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel Transistor DRAM (OCTRAM)

〇Fumiya Kimura1, Takamitsu Ochi1, Tsuyoshi Sugisaki1, Takanori Akita1, Isamu Ujiie1, Sota Mochizuki1, Masayoshi Iwayama1, Atsuko Sakata1, Shinji Miyano1, Takafumi Masuda1, Kazuki Eshiro1, Tomomasa Ueda1, Nobuyoshi Saito1, Keiji Ikeda1, Mutsumi Okajima1 (1. KIOXIA Corp. (Japan))
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[B-6-02]A Novel Pull-Up/Pull-Down Mechanism-Enabled High-Speed, Low-Voltage DRAM with Single CFET

〇Sandeep Semwal1, Pin Su1 (1. National Yang Ming Chiao Tung University (NYCU) (Taiwan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[B-6-03]Investigation of Row Hammer Effect Induced by Word Line Capacitive Crosstalk in 3D CT-DRAM Array

〇Jihoon Kim1, Dabok Lee1, Jonghyeon Ha1, Kanghyeon Im1, Yeonsu Jeong1, Jungsik Kim1, Hyeongyu Kim2, Yoojin Seol2, Jeongmin Son2, Hyokyung Kim2, Kihyun Kim2, Sung-Il Chang3, Su-in Yi4 (1. Department of Electrical Engineering, Gyeongsang National Univ., Jinju, Gyeongnam, 52828 (Korea), 2. Division of Electronic Engineering, Jeonbuk National Univ., Jeonju, Jeonbuk, 54896 (Korea), 3. MonolithIC3D, Texas, 75013 (USA), 4. Department of Electrical and Computer Engineering, Texas A&M Univ., College Station, Texas, 77843-3128 (USA))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-6-04]Investigation of Self-Heating Effects in 4F2 Vertical DRAM

〇Jiwoong Choi1, Jinhong Lee1, Hojun Kim1, Yeongmyeong Cho1, Dong keun Lee1, Jangsaeng Kim1,2, Sihyun Kim1,2, Sangwan Kim1,2 (1. Department of Electronic Engineering, Sogang Univ. (Korea), 2. Inst. of Semiconductor Technologies, Sogang Univ. (Korea))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-6-05]High-Density Three-Dimensional DRAM Using Vertical Storage Capacitor

〇Harsh Raju1, Bushra Fatima1, Pankaj Kumar1, Kunal -1, Mugdha Sharma1, Sanjeev Kumar Manhas1 (1. Indian Inst. of Tech. Roorkee (India))
Back to Category List