2026 International Conference on Solid State Devices and Materials
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Tue. Sep 15, 2026
Wed. Sep 16, 2026
Thu. Sep 17, 2026
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2:30 PM - 3:00 PM JST
(5:30 AM - 6:00 AM UTC)
[B-8-01 (Invited)]
Property design of HfO
2
- and AlN-based ferroelectric films for memory applications
〇Hiroshi Funakubo
1
, Kazuki Okamoto
1
(1. Institute of Science Tokyo (Japan))
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