2026 International Conference on Solid State Devices and Materials
Advanced Search

Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-8]Ferroelectric Materials

Thu. Sep 17, 2026 2:30 PM - 4:00 PM JST
Thu. Sep 17, 2026 5:30 AM - 7:00 AM UTC
Room B(Convention Hall 2, 2rd Floor)
Session Chair:E Ray Hsieh(National Yang Ming Chiao Tung Univ.), Halid Mulaosmanovic(GlobalFoundries)
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[B-8-01 (Invited)]Property design of HfO2- and AlN-based ferroelectric films for memory applications

〇Hiroshi Funakubo1, Kazuki Okamoto1 (1. Institute of Science Tokyo (Japan))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[B-8-02]Lanthanum Interlayer and Fluorine-Passivated HZO Co-Engineering for High-Memory-Window FeFETs with Suppressed Interface Traps from Room Temperature to 73K

〇Sangmyun Lim1, kyungsoo Park2, Sangkuk Han2, Jihoon Choi1, Taesuk Kim2, Hyunsoo Jung2, Changhwan Choi1,2 (1. Department of Semiconductor Engineering, Hanyang University (Korea), 2. Division of Materials Science & Engineering, Hanyang University (Korea))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[B-8-03]Microstructure-Performance Evolution in Lanthanum-Doped Ferroelectric HZO MIM Capacitors by Precession Electron Diffraction

〇Sarah Lynch1, Hannah Margavio1, Sara Aoki1, Dina Triyoso1, Steve Consiglio1, Dave Hetzer1, Cory Wajda1, Gert Leusink1, Rinus Lee1 (1. Tokyo Electron America, Inc. (USA))
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[B-8-04]Nucleation Limited Switching Kinetics of Ferroelectric and Antiferroelectric Hafnium Zirconium Oxides for Elevated Temperature

〇Cheng-Hong Liu1, Kuo-Yu Hsiang1,2, Chia-Chun Hung1, Min-Hung Lee1,3,4 (1. Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 2. Institute of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Graduate Institute of Electronics Engineering, National Taiwan Univ. (Taiwan), 4. Institute of Applied Mechanics, National Taiwan Univ. (Taiwan))
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[B-8-05]Fatigue-Free Highly Polarized HZO-based Ferroelectric Synapses Demonstrating Long Endurance and Stable LTP/LTD for Neuromorphic Computing

〇Long Nguyen Minh Le1, Abhijit Aich1, Yii-Tay Chang2, Fasai Visuddhidham1, Wachiraporn Poomeesap1, Yi-Rou Hsiao1, Asim Senapati1, Yi-Pin Chen3,4, Shih-Yin Huang4, Min-Hung Lee2, Siddheswar Maikap1,3 (1. Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 3. Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital (Taiwan), 4. School of Traditional Chinese Medicine, College of Medicine, Chang Gung Univ. (Taiwan))
Back to Category List