[B-8] Ferroelectric Materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[B-8-02] Lanthanum Interlayer and Fluorine-Passivated HZO Co-Engineering for High-Memory-Window FeFETs with Suppressed Interface Traps from Room Temperature to 73K

〇Sangmyun Lim¹, kyungsoo Park², Sangkuk Han², Jihoon Choi¹, Taesuk Kim², Hyunsoo Jung², Changhwan Choi^1,2 (1. Department of Semiconductor Engineering, Hanyang University (Korea), 2. Division of Materials Science & Engineering, Hanyang University (Korea))