Presentation Information
[C-2-06]Characterization of gate-defined quantum devices based on GeSn quantum wells
〇Prateek Kaul1,2, Jiayuan Zhang1,2, Jingxuan Sun1,2, Detlev Grützmacher1,2, Qing-Tai Zhao1, Makoto Kohda3, Katsushi Hashimoto3, Thomas Schäpers1,2,3, Dan Buca1 (1. Peter Grünberg Inst. 9 (PGI-9), Forschungzentrum Jülich, Jülich 52428, Germany (Germany), 2. JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany (Germany), 3. Department of Material Science, Tohoku University, Aobayama 2, Aoba-ku, Sendai 980-8579, Japan (Japan))
