[C-2] Qubit and Related Technology | 2026 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation09: Novel Functional / Quantum / Spintronic Devices and Materials

[C-2]Qubit and Related Technology

Tue. Sep 15, 2026 3:30 PM - 5:15 PM JST
Tue. Sep 15, 2026 6:30 AM - 8:15 AM UTC

Room C(101A, 1st Floor)

Session Chair:Jun Yoneda(The Univ. of Tokyo), Kazuyuki Kuroyama(The Univ. of Tokyo)

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[C-2-01 (Invited)]TBD

〇Takashi Nakajima¹ (1. RIKEN (Japan))

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[C-2-02]Disentangling and Mitigating Packaging-Induced Loss in a Large-Scale Superconducting Quantum Processor

〇Rui Wang^1,2, Yu Zhou^1,2, Shinya Sasaki^1,2, Toru Abe^1,2, Shu Watanabe^1,2, Tsuyoshi Takahashi^1,2, Shuhei Tamate², Yasunobu Nakamura^2,3, Norinao Kouma^1,2, Shintaro Sato^1,2 (1. Fujitsu Limited (Japan), 2. RIKEN Center for Quantum Computing (Japan), 3. Department of Applied Physics, Graduate School of Engineering, The University of Tokyo (Japan))

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[C-2-03]Strain Tensor Mapping of Si/SiGe Heterostructures for Spin-Qubit Applications by Scanning Diffraction X-Ray Microscopy

〇Momcilo Milosavljevic Milosavljevic^1,2, Yosuke Shimura², Cedric Corley-Wiciak³, Arne Loenders^1,2, Clement Godfrin², Oji Ugwumsinachi³, Steven Leake³, Tobias Schülli³, Roger Loo^2,4, Kristiaan de Greve^2,1 (1. KU Leuven (Belgium), 2. IMEC (Belgium), 3. ESRF (France), 4. Ghent Univ. (Belgium))

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[C-2-04]Electrode Engineering in Material-Defined Germanium Double Quantum Dots with Electrically and Physically Tunable Coupling Strength

〇Hao-Yun Cheng¹, Yu-Wen Chiu¹, Horng-Chih Lin¹, Pei-Wen Li¹ (1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan))

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[C-2-05]Ray-Based Sampling for Efficient Extraction of Transition Lines in Double Quantum Dot Stability Diagrams

〇Ehsan Alizadeh Kashtiban¹, Takafumi Fujita¹, Akira Oiwa¹ (1. The University of Osaka (Japan))

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[C-2-06]Characterization of gate-defined quantum devices based on GeSn quantum wells

〇Prateek Kaul^1,2, Jiayuan Zhang^1,2, Jingxuan Sun^1,2, Detlev Grützmacher^1,2, Qing-Tai Zhao¹, Makoto Kohda³, Katsushi Hashimoto³, Thomas Schäpers^1,2,3, Dan Buca¹ (1. Peter Grünberg Inst. 9 (PGI-9), Forschungzentrum Jülich, Jülich 52428, Germany (Germany), 2. JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany (Germany), 3. Department of Material Science, Tohoku University, Aobayama 2, Aoba-ku, Sendai 980-8579, Japan (Japan))

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