[H-1] Thermoelectric Devices and Materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[H-1-05] Effect of Si Deposition Rate on the Room-Temperature Thermoelectric Properties of Ba₂AgSi₃ Thin Films

〇Kimimaru Kajihara¹, Taiga Shinohara¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko³, Takashi Suemasu³ (1. Graduate School of Sci. and Tech., Univ. of Tsukuba (Japan), 2. Advanced Materials Res. Lab., Tosoh Corp. (Japan), 3. Dept. of Applied Physics, Inst. of Pure and Applied Sci., Univ. of Tsukuba (Japan))

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