Session Details

[H-1]Thermoelectric Devices and Materials

Tue. Sep 15, 2026 1:15 PM - 2:45 PM JST
Tue. Sep 15, 2026 4:15 AM - 5:45 AM UTC
Room H(105, 1st Floor)
Session Chair:Atsuko Kosuga(Osaka Metropolitan Univ.), Takuya Hoshii(Science Tokyo)

[H-1-01 (Invited)]Development of Solid-State Electrochemical Thermal Transistors

〇Hiromichi Ohta1 (1. Hokkaido Univ. (Japan))

[H-1-02]Performance Enhancement of Multistage Silicon Micro Thermoelectric Devices Using Nickel Silicide Interconnects

〇Kaichi Takayama1, Tatsuya Hayashi1, Yusuke Kozuka1,2, Makoto Kashiwagi1, Takayoshi Shimura1, Momoko Deura1, Takayoshi Katase3, Piotr Pokryszka4, Karolina Laszczyk4, Takanobu Watanbe1 (1. Waseda Univ. (Japan), 2. NIMS (Japan), 3. Inst. of Science Tokyo (Japan), 4. Wroclaw Univ. of Sci. and Tech. (Poland))

[H-1-03]Site-Selective Design for Low Lattice Thermal Conductivity in NiSn- and CoSb-Based Half-Heusler Compounds

〇Tika Restianingsih1, Yoshihiro Gohda1 (1. Science Tokyo (Japan))

[H-1-04]Epitaxial Growth and Ag Doping Mechanism of Mg2Sn Thermoelectric Thin Films

Gardin Muhammad Andika Saputra1,2, 〇Nicha Hirankarn1,2, Takashi Aizawa2, Isao Ohkubo1,2, Takeaki Sakurai1, Takao Mori1,2 (1. The Univ. of Tsukuba (Japan), 2. National Inst. of Material Science (Japan))

[H-1-05]Effect of Si Deposition Rate on the Room-Temperature Thermoelectric Properties of Ba2AgSi3 Thin Films

〇Kimimaru Kajihara1, Taiga Shinohara1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko3, Takashi Suemasu3 (1. Graduate School of Sci. and Tech., Univ. of Tsukuba (Japan), 2. Advanced Materials Res. Lab., Tosoh Corp. (Japan), 3. Dept. of Applied Physics, Inst. of Pure and Applied Sci., Univ. of Tsukuba (Japan))