Presentation Information
[PS-03-04]High-Performance Ferroelectric negative capacitance FinFET with solid-solution HZO Gate Stack for Low-Power RF Applications
〇Cheng-Yueh Cheng1, Chun-Wei Wu1, Chia-Yi Lin1, Chao-Wei Wu1, Yueh-Chun Wu1, Fu-Ju Hou3, Hsin-Hui Hu2, Yung-Chun Wu1 (1. National Tsing Hua University (Taiwan), 2. National Taipei University of Technology (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))