Presentation Information

[SO-PS-02-13]Analysis of Nitride Thickness Effects on Programming Characteristics in Al2O3/Si3N4 Charge Trap Devices

〇Youngjin Jeon1, Joon Hwang2, Min-Kyu Park3, Jong-Ho Lee2, Myounggon Kang1 (1. Univ. of Seoul (Korea), 2. Seoul National Univ. (Korea), 3. Gachon Univ. (Korea))