[SO-PS-02] 02: Advanced and Emerging Memories / New Applications | 2026 International Conference on Solid State Devices and Materials

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Short Oral Presentation02: Advanced and Emerging Memories / New Applications

[SO-PS-02]02: Advanced and Emerging Memories / New Applications

Wed. Sep 16, 2026 1:30 PM - 2:36 PM JST
Wed. Sep 16, 2026 4:30 AM - 5:36 AM UTC

Room B(Convention Hall 2, 2rd Floor)

Session Chair:Keiji Hosotani(KIOXIA Corporation), Kazuyuki Kouno(Nuvoton Technology Corporation Japan)

1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-02-01]High Bandwidth Dynamic Flash Memory (HBD) with Planar Accessibility

〇Koji Sakui¹, Takayuki Ohba¹ (1. Institute of Science Tokyo (Japan))

1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-02-02]Integration of Analog- and Digital-like Switching Behaviors in a Homojunction Memristor for Hardware Neural Network Implementation

〇Kyeong-Bae Lee¹, Byoungdeog Choi¹ (1. Sungkyunkwan Univ. (Korea))

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-02-03]Nitrogen plasma engineering of TiN bottom electrodes for enhanced ferroelectric properties in TiN/Hf_0.5Zr_0.5O₂/TiN capacitors

Tung-Ming Pan^1,2, 〇Yung-En Cheng¹, Shih-Ting Chuang¹, Wei-Che Weng¹, Jim-Long Her¹ (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan))

1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-02-04]Enhancing 3D Flash Memory Reliability by Stress Alleviating Techniques

〇Jayavel Pachamuthu¹, Yanfang Shi², Peng Zhang¹, Deepanshu Dutta¹ (1. SanDisk Corporation (USA), 2. SanDisk Information Technology (China))

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-02-05]Area-Ratio Engineered AlScN/GaN Transistors for Enhanced Ferroelectric Switching

〇Jongmin Park¹, Hyeongjun Joo¹, Geonwook Yoo^1,2 (1. Department of Intelligent Semiconductor, Soongsil University (Korea), 2. School of Electronic Engineering, Soongsil University (Korea))

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-02-06]Hot Carrier Injection Dependence on Select Gate Patterns during GIDL Erase Operation in 3D NAND Flash Memory

〇Jae Hyun Nam¹, Jin Ho Chang¹, Suk-Kang Sung², Jun Hyoung Kim², Woo Young Choi¹ (1. Seoul National Univ. (Korea), 2. Samsung Electronics Co. (Korea))

1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-02-07]Improving Erase Speed and Retention Characteristics Using Bandgap Engineering and Odd/Even Erase Scheme in 3D NAND Flash Memory

〇Kyungmin Lee¹, Myounggon Kang¹ (1. Univ. of Seoul (Korea))

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-02-08]Impact of MOSFET Sizing and Supply Voltage Scaling on Recall Window Characteristic of 6T2C Nonvolatile SRAM

〇Minseok Kim¹, Myounggon Kang¹ (1. Univ. of Seoul (Korea))

1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-02-09]Enhanced Retention Characteristics in 3D NAND Flash Memory by Suppressing Lateral Migration Using a Convex Structure

〇Beomgeun Lee¹, Myounggon Kang¹ (1. University of Seoul (Korea))

1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-02-10]Initial-State-Controlled Photonic Reservoir Computing in a Two-Terminal Memristive Device

〇Yumeng Zheng¹, Ryosuke Murai¹, Kentaro Kinoshita¹ (1. Tokyo Univ. of Science (Japan))

1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-02-11]Coupled Al₂O₃Interlayer and HZO Ferroelectric Layer Thickness Engineering for Memory Window–Operation Voltage–Retention Optimization in MIFIS FeFETs

〇Jia Yang^1,2, Runhao Han¹, hu Tao², Kaiyi Li^1,2, Xianzhou Shao², Hao Xu², Xiaolei Wang² (1. The School of Advanced Interdisciplinary Sci., Univ. of Chinese Academy of Sci. (China), 2. State Key Lab. of Fabrication Tech. for Integrated Circuits, Inst. of Microelectronics of the Chinese Academy of Sci. (China))

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-02-12]Synaptic Plasticity with Varied Retention in Interface-EngineeredProtonic Oxide Transistors

〇RUPAM MANDAL¹ (1. National Institute for Materials Science (Japan))

1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-02-13]Analysis of Nitride Thickness Effects on Programming Characteristics in Al₂O₃/Si₃N₄ Charge Trap Devices

〇Youngjin Jeon¹, Joon Hwang², Min-Kyu Park³, Jong-Ho Lee², Myounggon Kang¹ (1. Univ. of Seoul (Korea), 2. Seoul National Univ. (Korea), 3. Gachon Univ. (Korea))

1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-02-14]A Superlattice-like Memristive Device for Artificial Synapses and Hardware Security

〇Yong-Jyun Wang¹, Rupam Mandal¹, Tohru Tsuruoka¹, Kazuya Terabe¹ (1. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (Japan))

1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-02-15]Phase-Coexistence Engineering in FE-AFE HZO Bilayer MFM Capacitors for Improved Endurance, Imprint Stability, and Switching Nucleation

〇Tsz Ying Pun¹, Cheng-Hung Wu², Tsung-Ying Lin¹, William Cheng-Yu Ma³, Vita Pi-Ho Hu², Chun-Jung Su^1,4 (1. Dept. Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Graduate Inst. Electronics Engineering, National Taiwan Univ. (Taiwan), 3. Dept. Electrical Engineering, National Sun Yat-sen Univ. (Taiwan), 4. Taiwan Semiconductor Res. Inst., National Inst. of Applied Res. (Taiwan))

2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-02-16]Si/SiGe Quantum-Well FET Enabling Memory and Artificial Synapse Functions for Neuromorphic Computing

〇Anjana Rajan¹, Jiayuan Zhang¹, Yu-Tzu Liao¹, Jhonny Tiscareño Ramírez¹, Joachim Knoch², Detlev Grützmacher¹, Dan Buca¹, Andreas Mai^3,4, Yuji Yamamoto^3,5, Qing-Tai Zhao¹ (1. PGI-9 , Forschungszentrum Jülich (Germany), 2. RWTH Aachen Univ. (Germany), 3. IHP-Leibniz Inst. for High Performance Microelectronics (Germany), 4. Technische Hochschule Wildau (Germany), 5. Nagoya Univ. (Japan))

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-02-17]Neuromorphic Vision Tasks on a Bi₂O₂Se Optoelectronic Synapse: From Conductance Plasticity to Hardware-Constrained Deep Learning

〇Huynh-Uyen-Phuong Nguyen¹, Chen-Yu Lin¹, Chun-Wei Li¹, Po-Wen Chiu¹ (1. National Tsing Hua University (Taiwan))

2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-02-18]Vacuum evaporation of ternary Ge-S-X (X=Te, Sn) thin films for the selector application

〇Daiki Inose¹, Mihyeon Kim¹, Shogo Hatayama², Yuta Saito^1,2,3 (1. Tohoku Univ. (Japan), 2. SFRC, AIST (Japan), 3. GXT, Tohoku Univ. (Japan))

2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

[SO-PS-02-19]Polarity Dependent Rectification Mechanism in MoS₂ Interfacial Layer Self-Rectifying RRAM

〇Yoojin Shin¹, Minwoo Kwon¹ (1. Seoul National University of Science and Technology (Korea))

2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-02-20]Co-Optimization of Channel Interlayer Nitridation and Al₂O₃/HfO₂/Al₂O₃ Gate Interlayer for 3D NAND Compatible FeFETs

〇Min Liao¹, Hao Xu¹, Runhao Han¹, Xianzhou Shao¹, Xinpei Jia¹, Yuanyuan Zhao¹, Xiaoyu Ke¹, Xiaoqing Sun¹, Junshuai Chai¹, Jinjuan Xiang², Xiaolei Wang¹, Wenwu Wang¹ (1. Institute of Microelectronics, Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Technology (China))

2:10 PM - 2:12 PM JST(5:10 AM - 5:12 AM UTC)

[SO-PS-02-21]Polarity-Tunable WSe₂ Ferroelectric FETs for Multistate Searching Enabled by BEOL Sequential 3D Integration

〇Pin-Yuan Wang¹, Yu-Wei Chen¹, Bing-Hong Chen¹, Li-Heng Han¹, Duen-Hong Jheng¹, Bo-Wei Yang¹, Yu-Lin Li¹, Pin-Yi Li¹, Chih-Chao Yang², Chao-Hui Yeh¹ (1. National Tsing Hua University, Hsinchu (Taiwan), 2. Taiwan Semiconductor Research Institute, Hsinchu (Taiwan))

2:12 PM - 2:14 PM JST(5:12 AM - 5:14 AM UTC)

[SO-PS-02-22]Flexible Broadband Optoelectronic Memristor Based on IGZO Homojunction with Inherent Self-Rectifying Characteristics

〇Haoze Yu^1,2, Zijian Wang^1,2, Xuemeng Fan^1,2, Baichen Zhu^1,2, Jie Wang^1,2, Yishu Zhang^1,2 (1. College of Integrated Circuits,Zhejiang Univ. (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China))

2:14 PM - 2:16 PM JST(5:14 AM - 5:16 AM UTC)

[SO-PS-02-23]Double-Gate Mixed Phase Boundary FETs for Robust On-Chip Binary Neural Networks

〇Yeonseop Shin¹, Eun Chan Park², Daewoong Kwon², Jangsaeng Kim^1,3,4 (1. Department of Semiconductor Eng., Sogang Univ. (Korea), 2. Department of Electronic Eng., Hanyang Univ. (Korea), 3. Department of Electronic Eng., Sogang Univ. (Korea), 4. Department of System Semiconductor Eng., Sogang Univ. (Korea))

2:16 PM - 2:18 PM JST(5:16 AM - 5:18 AM UTC)

[SO-PS-02-24]Improvement of Cell Characteristics using Localized Doping for Convex and Concave Channel Structures in 3D NAND Flash

Daewoong Kang¹, 〇Siwon Park^1,2, Hojun Lee^1,3, Hoyeon Ko^1,3, Jeongnam Youn¹, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))

2:18 PM - 2:20 PM JST(5:18 AM - 5:20 AM UTC)

[SO-PS-02-25]Effects of Proton Irradiation on the Transport, Switching, and Reliability Characteristics of Al_0.8Sc_0.2N Ferroelectric Capacitors

〇Yoojin Lim¹, Juno Bae¹, Hyeongjun Joo¹, Jongmin Park¹, Dongseok Kim², Geonwook Yoo¹ (1. Soongsil Univ. (Korea), 2. Korea Atomic Energy Research Institute (KAERI) (Korea))

2:20 PM - 2:22 PM JST(5:20 AM - 5:22 AM UTC)

[SO-PS-02-26]Effects of Oxygen Vacancy on the Variability of Hafnia Ferroelectrics

〇Hosu Park¹, Sangwan Kim¹, Daewoong Kwon², Wonjun Shin¹ (1. Sungkyunkwan Univ. (Korea), 2. Hanyang Univ. (Korea))

2:22 PM - 2:24 PM JST(5:22 AM - 5:24 AM UTC)

[SO-PS-02-27]Nb/TiN Gate-Stack Engineering for Enhanced Polarization Switching and Access- Rate Reliability in HZO Ferroelectric MFIS Capacitors

〇Yu-Ting Chen¹, Cheng-Hung Wu¹, Hsuan-Yi Yang¹, Yi-Cheng Lin¹, Chun-Jung Su^2,3, Vita Pi-Ho Hu¹ (1. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 2. Dept. of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Taiwan Semiconductor Res. Inst., National Inst. Applied Res. (Taiwan))

2:24 PM - 2:26 PM JST(5:24 AM - 5:26 AM UTC)

[SO-PS-02-28]Positive Bias Stress (PBS) Stability Improved by X-ray Irradiation for IGZO Ferroelectric Field-Effect Transistors

〇Che-Chi Cheng¹, Zao-Feng Lou¹, I-Chun Cheng¹, Min-Hung Lee¹ (1. National Taiwan University (Taiwan))

2:26 PM - 2:28 PM JST(5:26 AM - 5:28 AM UTC)

[SO-PS-02-29]Novel Methods Enhancing GIDL current to Improve the Erase Performance in 3D NAND Flash Memory

Daewoong Kang¹, 〇Hoyeon Ko^1,2, Hojun Lee^1,2, Siwon Park^1,3, Jeongnam Youn¹, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))

2:28 PM - 2:30 PM JST(5:28 AM - 5:30 AM UTC)

[SO-PS-02-30]Ferroelectric Al₂O₃-Embedded Hf_0.5Zr_0.5O₂ Channel-last Transistors with a 950℃ Thermal Budget for 3D NAND Application

〇Wenbo Fan¹, Xiaoyu Ke², Xiaolei Wang² (1. Univ. of Chinese Academy of Sciences (China), 2. Inst. of Microelectronics of the Chinese Academy of Sciences (China))

2:30 PM - 2:32 PM JST(5:30 AM - 5:32 AM UTC)

[SO-PS-02-31]TiO₂ Interlayer Engineering and Recovery Strategies for Enhancing
Cycling-induced Reliability in HfO₂-Based Ferroelectric Capacitors

〇Fei Yu^1,2, Yutai Man², Wanmei Zhang², Xingcheng Jin³, Chongyong Guo³, Hongbo Li³, Huan Liu^1,2, Bing Chen^1,2, Yan Liu^1,2, Xiao Yu^1,2, Genquan Han^1,2 (1. Faculty of Integrated Circuit, Xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China), 3. China Resources Microelectronics Ltd. (China))

2:32 PM - 2:34 PM JST(5:32 AM - 5:34 AM UTC)

[SO-PS-02-32]Quantitative Bit-Precision Evaluation in Ferroelectric Synaptic Transistors Using Low-Frequency Noise Spectroscopy

〇Jaehong Park¹, Daewoong Kwon², Wonjun Shin¹ (1. Sungkyunkwan Univ. (Korea), 2. Hanyang Univ. (Korea))

2:34 PM - 2:36 PM JST(5:34 AM - 5:36 AM UTC)

[SO-PS-02-33]SOI FinFET-Integrated HfO₂/SrTiO₃ RRAM Cells for Energy-Efficient In-MemoryHyperdimensional Computing

〇Chih-Chia Lin¹, Chao-Hui Yeh¹, Chih-Chao Yang², Bo-Cheng Chen¹ (1. National Tsing Hua University (Taiwan), 2. Taiwan Semiconductor Research Institute (Taiwan))

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