Presentation Information
[SO-PS-02-30]Ferroelectric Al2O3-Embedded Hf0.5Zr0.5O2 Channel-last Transistors with a 950℃ Thermal Budget for 3D NAND Application
〇Wenbo Fan1, Xiaoyu Ke2, Xiaolei Wang2 (1. Univ. of Chinese Academy of Sciences (China), 2. Inst. of Microelectronics of the Chinese Academy of Sciences (China))
