Presentation Information

[SO-PS-04-01]Enhancement-Mode Recessed-Gate InAlGaN/GaN HEMTs with HfAlO Gate Dielectric and Gate Field Plate

〇Chung-Che Shen1, Yi-Hsuan Chang1, Yan-Kuei Wu1, Wei-Chou Hsu1,2 (1. Inst. of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ. (Taiwan))

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